E-Disk® Macro Targeted for BiTMICRO's New Generation of High-Performance Solid-State Storage Solutions
Fremont, Calif. - April 19, 2007 - MoSys, Inc., the leading provider of high -density system -on -chip (SoC) embedded memory intellectual property (IP) solutions, and BiTMICRO Networks, the leading provider of high -performance non -volatile solid -state disk and semiconductor storage solutions, announced that BiTMICRO has become the latest licensee of MoSys' 1T -SRAM® embedded memory macro technology. BiTMICRO will leverage MoSys' technology to add new performance, latency and area advantages to its Translation and Linking of I/O Nodes (TALINO™) SoC, a high -speed disk controller featuring integrated common industry standard interface cores. The cutting -edge TALINO™ ASIC will be deployed in E -Disk® maxIO™ SSDs, the next generation of solid state storage solutions that define BiTMICRO's vision for the much awaited proliferation of flash -memory based storage in the enterprise. E -Disk® maxIO™ storage devices are very high performance SSDs that come in industry standard and small storage form factors supporting the latest high speed storage interfaces.
At a speed of 350 MHz in a standard 90 -nm CMOS logic process, the MoSys -enabled BiTMICRO memory macro reaches a performance level that is unmatched by other embedded memory technologies.
"BiTMICRO's solid state disk drive and flash disk drive solutions are ideal for harsh, demanding, and mission -critical applications in the industrial, embedded, computer, communication, medical, military, and aerospace industries," said Rey Bruce, Chairman and CEO of BiTMICRO Networks. "MoSys' 1T -SRAM technology was the only available solution that could meet the high performance, low latency and demanding reliability requirements of our system design."
"MoSys and BiTMICRO are collaborating closely to provide this performance -optimized design on a standard 90 -nm CMOS process," said Chet Silvestri, President and CEO of MoSys. "The broad range of applications for the E -Disk® solution further extends the reach of MoSys' 1T -SRAM technology into areas with demanding portability, durability, and speed requirements."
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About MoSys, Inc.
Founded in 1991, MoSys develops, licenses and markets industry -leading embedded memory IP for semiconductors. MoSys' patented 1T -SRAM® & 1T -FLASH® technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 100 million chips incorporating 1T -SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available at http://www.mosys.com.
About BiTMICRO Networks
BiTMICRO® Networks (http://www.bitmicro.com) is the leading provider of high performance solid state disk and non -volatile semiconductor storage solutions. The Company's flagship product, the E -Disk® SSD, is offered with SATA, SCSI Narrow and Wide, IDE/ATA and Fibre Channel interfaces in 2.5 -inch and 3.5 -inch hard disk drive footprints, and 19 -inch rack mount configurations scalable up to several terabytes of pure solid state storage. High -resolution photo images of BiTMICRO's product line are available at http://www.bitmicro.com/press_multimedia.php.
E -Disk, BiTMICRO, and TALINO are registered trademarks and trademarks of BiTMICRO Networks, Inc. 1T -SRAM and 1T -FLASH are registered trademarks of MoSys, Inc. BiTMICRO Networks and MoSys acknowledge trademarks or registered trademarks of other organizations for their respective products and services.
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